Ta Doping Effect on Structural and Optical Properties of InTe Thin Films
Chunmin Liu1, Yafei Yuan1,2, Xintong Zhang1
1Department of Optical Science and Engineering, Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai 200433, China.
Nanomaterials (Basel, Switzerland)
|September 24, 2020
Summary
Tantalum (Ta) doping in Indium Telluride (InTe) thin films enhances optical properties. Ta doping increases band gap and optical damage threshold, showing potential for optoelectronic devices and optical limiters.
Area of Science:
- Materials Science
- Solid State Physics
- Optoelectronics
Background:
- Indium Telluride (InTe) is a promising semiconductor material.
- Tantalum (Ta) doping can modify the optoelectronic properties of thin films.
- Understanding these modifications is crucial for advanced material applications.
Purpose of the Study:
- To investigate the effect of Ta doping on the structural, optical, and nonlinear absorption properties of InTe thin films.
- To explore the potential of Ta-doped InTe for optoelectronic devices and optical limiting applications.
Main Methods:
- Magnetron co-sputtering and nitrogen annealing for sample preparation.
- X-ray diffraction (XRD), Raman spectroscopy, energy-dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS) for structural and chemical analysis.
- UV-VIS-NIR transmittance spectra and open aperture Z-scan technique for optical and nonlinear absorption characterization.
Main Results:
- Tetragonal structure of InTe confirmed, with decreasing crystallinity upon Ta doping.
- Band gap increased from 1.71 eV to 1.85 eV due to the Burstein-Moss effect.
- Ta-doped InTe exhibited two-photon absorption, with decreasing nonlinear absorption parameters and an increasing damage threshold from 176 to 242 GW/cm².
Conclusions:
- Ta doping effectively tunes the structural and optical properties of InTe thin films.
- The observed increase in band gap and damage threshold, along with two-photon absorption behavior, highlights the potential of Ta-doped InTe.
- These findings suggest promising applications in optoelectronics and optical limiting technologies.
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