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Enhancing LiAlO synaptic performance by reducing the Schottky barrier height for deep neural network applications
Yaoyao Fu1, Boyi Dong, Wan-Ching Su
1Wuhan National Laboratory for Optoelectronics, School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China. heyuhui@hust.edu.cn miaoxs@hust.edu.cn.
Optimized LiAlOX memristor synapses achieve high precision and linearity, significantly improving deep neural network performance for action recognition tasks. This advancement addresses key challenges in implementing memristive devices in complex artificial intelligence systems.
Area of Science:
- Materials Science
- Neuroscience
- Computer Science
Background:
- Shallow neural networks show promise, but deep neural networks (DNNs) require highly precise and linear synaptic analog weight tuning.
- Existing memristor synapse technologies face challenges in meeting these stringent requirements for realistic DNN applications.
- Action recognition tasks in DNNs demand robust and efficient synaptic functionalities.
Purpose of the Study:
- To fabricate and optimize a Lithium Aluminum Oxide (LiAlOX) memristor synapse for high-precision and linear analog weight tuning.
- To investigate the impact of device optimization on the performance of deep neural networks for action recognition.
- To reduce the nonlinearity factor and enhance the adjustability of synaptic conductance states.
Main Methods:
- Fabrication and optimization of LiAlOX memristor devices.
- Tuning initial conductance states to achieve multiple, continuously adjustable levels.
- Characterization of device performance using current-voltage (I-V) curves to estimate Schottky barrier height (SBH).
- Implementation of the optimized memristor synapses in a deep neural network for action recognition.
Main Results:
- Achieved 120 levels of continuously adjustable conductance states.
- Substantially reduced the nonlinearity factor from 8.96 to 0.83.
- Attributed performance enhancements to a reduced Schottky barrier height (SBH) between the filament tip and electrode.
- Increased action recognition accuracy from 15.1% to 91.4% on the Weizmann video dataset using the optimized devices.
Conclusions:
- The optimized LiAlOX memristor synapse effectively meets the stringent requirements for deep neural networks.
- Device optimization, particularly the reduction of SBH, is crucial for achieving high precision and linearity in synaptic weight tuning.
- The developed memristor synapse technology shows significant potential for advancing realistic artificial intelligence applications, such as action recognition.
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