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Updated: Dec 5, 2025

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Prediction of two-dimensional ferromagnetic ferroelectric VOF2 monolayer
Hai-Peng You1, Ning Ding1, Jun Chen1
1School of Physics, Southeast University, Nanjing 211189, China. sdong@seu.edu.cn.
Abstract:
Nowadays, designing and searching for materials with multiple functional characteristics are the keys to achieving high-performance electronic devices. Among many candidates, two-dimensional multiferroic materials have great potential to be applied in highly integrated magnetoelectric devices, such as high-density non-volatile memories. Here, we predict a two-dimensional material, VOF2 monolayer, to possess intrinsic ferroelectric and ferromagnetic properties. The VOF2 monolayer owns the largest in-plane ferroelectric polarization (332 pC m-1) in the family of VOX2 (X: halogen) oxyhalides. Different from other VOX2 monolayers whose magnetic ground states are antiferromagnetic or noncollinear spiral textures, the VOF2 monolayer owns a robust ferromagnetic ground state, which is rare but highly desirable. Our theoretical prediction provides a good candidate and starting point for the further pursuit of more two-dimensional multiferroic materials with high-performance magnetoelectricity.
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