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Proximitized Josephson junctions in highly-doped InAs nanowires robust to optical illumination
Lily Yang1, Stephan Steinhauer1, Elia Strambini2
1Department of Applied Physics, KTH Royal Institute of Technology, Albanova University Centre, SE-106 91 Stockholm, Sweden.
Nanotechnology
|October 23, 2020
Summary
Josephson junctions made with InAs nanowires show robustness against optical light, primarily reacting through heating. These junctions can detect optical photons via thermal effects, suggesting integration with photonic circuits.
Area of Science:
- Condensed Matter Physics
- Quantum Information Science
- Nanotechnology
Background:
- Proximitized Josephson junctions are crucial for quantum technologies.
- Semiconductor nanowires offer unique properties for electronic devices.
Purpose of the Study:
- Investigate the effects of optical-frequency light on InAs/Al Josephson junctions.
- Assess the photosensitivity and robustness of these nanowire-based devices.
- Explore potential applications in optical photon detection.
Main Methods:
- Fabrication of InAs/Al Josephson junctions using highly n-doped InAs nanowires.
- Characterization of current-voltage (IV) curves under varying photon flux and wavelengths.
- Modeling of experimental data using a resistively shunted junction model.
Main Results:
- Josephson junctions exhibited robustness to optical radiation, with primary interaction via heating.
- Non-thermal effects were observed above the critical current upon photon exposure.
- A shift in critical current was measured, indicating sensitivity to optical frequencies.
Conclusions:
- InAs nanowire-based Josephson junctions are suitable for integration with photonic circuits.
- These junctions can function as optical-frequency photon detectors through thermal mechanisms.
- The study highlights the potential of nanowire Josephson junctions in hybrid quantum-photonic systems.
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