Related Experiment Video
Updated: Dec 3, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
Published on: August 2, 2019
Many-body tunneling and nonequilibrium dynamics in double quantum dots with capacitive coupling
Wenjie Hou1,2, Yuandong Wang3, Weisheng Zhao1,2
1School of Microelectronics, Beihang University, Beijing 100191, People's Republic of China.
Many-body tunneling (MBT) in double quantum dots (DQDs) remains robust against inter-dot Coulomb interactions (U') up to 10% of intra-dot interactions (U). This finding is crucial for developing quantum dots (QD)-based qubits.
Area of Science:
- Quantum Physics
- Condensed Matter Physics
- Nanotechnology
Background:
- Double quantum dots (DQDs) are minimal systems for quantum computation.
- Pauli spin blockade (PSB) and many-body tunneling (MBT) are key phenomena in DQDs.
- Inter-dot Coulomb interaction (U") and blockade (IDCB) effects are present but their impact on PSB and MBT is not well understood.
Purpose of the Study:
- Investigate the effect of inter-dot Coulomb interaction (U") on tunneling processes in series-coupled DQDs.
- Analyze the influence of U" on Pauli spin blockade (PSB) and many-body tunneling (MBT).
- Determine the robustness of MBT and its relationship with carrier doublon number under varying U".
Main Methods:
- Theoretical study of tunneling processes in series-coupled DQDs.
- Simulation of transport properties with varying inter-dot Coulomb interaction (U").
- Analysis of the impact of U" on many-body tunneling (MBT) and carrier doublon number.
Main Results:
- Many-body tunneling (MBT) is robust against inter-dot Coulomb interaction (U") for U"/U < 0.1.
- The linear relationship between carrier doublon number and MBT current is maintained.
- Inter-dot Coulomb interaction (U") does not significantly disrupt the MBT process within this range.
Conclusions:
- The many-body tunneling (MBT) process in DQDs is resilient to moderate inter-dot Coulomb interactions (U").
- These findings enhance the understanding of MBT in DQDs.
- The results provide insights for manipulating quantum dot (QD)-based qubits.
Related Concept Videos
Valence Bond Theory
Dielectric Polarization in a Capacitor
The de Broglie Wavelength
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Electrostatic Boundary Conditions in Dielectrics
Consider a case where both the mediums across a boundary are two different dielectric materials. Recall that the electric field and electric displacement are proportional and related through the material's permittivity....
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

