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Ultrafast Auger process in few-layer PtSe2.

Hee Jun Shin1, Seongkwang Bae, Sangwan Sim

  • 1Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Korea.

Nanoscale
|November 2, 2020
PubMed
Summary

Researchers explored defect-assisted Auger recombination in platinum diselenide (PtSe2) using ultrafast spectroscopy. They found this defect-mediated process significantly impacts carrier dynamics in two-dimensional semiconductors.

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Ultrafast Spectroscopy

Background:

  • Two-dimensional (2D) systems exhibit enhanced many-body interactions due to Coulomb interactions and quantum confinement.
  • Auger recombination is a key many-body process in 2D semiconductors, influencing carrier lifetime and material properties.
  • Platinum dichalcogenides, like PtSe2, are promising 2D materials with unique electronic and magnetic properties.

Purpose of the Study:

  • To investigate the Auger process in few-layer semiconducting platinum diselenide (PtSe2) for the first time.
  • To understand carrier dynamics and the role of defects in PtSe2 under ultrafast excitation.

Main Methods:

  • Utilized ultrafast optical-pump terahertz-probe spectroscopy to study carrier dynamics in few-layer PtSe2.

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  • Employed high excitation intensity to saturate defect trap sites and observe surviving carrier interactions.
  • Performed theoretical simulations to analyze the observed many-body recombination process.

    • Main Results:

    • Identified significant carrier trapping by defects within picoseconds due to high defect density in PtSe2.
    • Observed a defect-assisted Auger recombination process, distinct from band-to-band Auger recombination.
    • Theoretical simulations approximated the three-body Auger process as bimolecular recombination with a rate of ~3.3 × 10-3 cm2 s-1.

    Conclusions:

    • The study reveals that defect-assisted Auger recombination is a significant many-body process in PtSe2.
    • This work highlights the crucial interplay between defects and ultrafast many-body dynamics in 2D semiconductors.
    • Provides fundamental insights into carrier recombination mechanisms in platinum dichalcogenides.