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The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
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Related Experiment Video

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Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Band Alignment of ScAl1-N/GaN Heterojunctions.

Eric N Jin1, Matthew T Hardy2, Alyssa L Mock1

  • 1NRC Research Associateship Programs, 500 Fifth Street, Washington, DC 20001, United States.

ACS Applied Materials & Interfaces
|November 4, 2020
PubMed
Summary
This summary is machine-generated.

The band alignment of Scandium Aluminum Nitride (ScAlN) with Gallium Nitride (GaN) can be tuned by adjusting the ScN alloy fraction. This tuning is crucial for developing advanced electronic and optical devices.

Keywords:
band alignmentsepitaxial filmsferroelectricspiezoelectricsultrawide-band-gap materials

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Semiconductor Physics

Background:

  • Scandium Aluminum Nitride (ScAlN) is an ultrawide-band-gap material with significant piezoelectric and ferroelectric properties.
  • Epitaxial growth of ScAlN on Gallium Nitride (GaN) enables novel high-power transistors and nonvolatile memory.
  • Understanding ScAlN/GaN band alignment is critical for controlling device electronic and optical properties.

Purpose of the Study:

  • To experimentally determine the band gap of ScAlN and the band offsets between ScAlN and GaN.
  • To investigate the influence of ScN alloy fraction on ScAlN band gap and band alignment.
  • To compare experimental findings with first-principles calculations.

Main Methods:

  • Optical characterization using spectroscopic ellipsometry to measure the ScAlN band gap.
  • X-ray photoemission spectroscopy (XPS) to measure ScAlN/GaN band offsets.
  • First-principles calculations for comparative analysis.

Main Results:

  • The ScAlN band gap decreases with increasing ScN alloy fraction, exhibiting a negative bowing parameter.
  • A transition from type-I (straddling) to type-II (staggered) band offsets occurs at Sc composition (x) beyond approximately 0.11.
  • Experimental results align with theoretical predictions.

Conclusions:

  • The valence band alignment of ScAlN/GaN heterostructures is tunable via Sc alloy fraction.
  • This tunability provides a pathway for designing advanced ScAlN/GaN-based electronic and optical devices.
  • The study provides essential data for future heterostructure engineering.