Green-Light-Selective Organic Photodiodes with High Detectivity for CMOS Color Image Sensors

Stacked structures employing wavelength-selective organic photodiodes (OPDs) have been studied as promising alternatives to the conventional Si-based image sensors because of their color constancy. Herein, novel donor (D)-π-acceptor (A) molecules are designed, synthesized, and characterized as green-light-selective absorbers for application in organic-on-Si hybrid complementary metal-oxide-semiconductor (CMOS) color image sensors. The p-type molecules, combined with two fused-type heterocyclic donors and an electron-accepting unit, exhibit cyanine-like properties that are characterized by intense and sharp absorption. This molecular design leads to improved absorption properties, thermal stability, and higher photoelectric conversion compared to those of a molecular design based on a nonfused ring. A maximum external quantum efficiency of 66% (λ_max = 550 nm) and high specific detectivity (D*) of 8 × 10¹³ cm Hz^1/2/W are achieved in an OPD consisting of a bulk heterojunction blend with two transparent electrodes on both sides. Finally, the green-light-detection capability of the narrow-band green-selective OPD is demonstrated by the optical simulation of an organic-on-Si hybrid, stacked-type, full-color photodetector comprising the green-light-selective OPD and a bottom Si photodiode with only blue and red color filters. Based on this molecular design, further optimization of the OPDs can allow the development of various optoelectronic sensors including 3D-stacked image sensors with enhanced sensitivities to replace the conventional Si-based CMOS image sensors.