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Published on: April 12, 2018
Ferroelectricity and phase transitions in In2Se3 van der Waals material
Maryam Soleimani1, Mahdi Pourfath
1School of Electrical and Computer Engineering, University College of Engineering, University of Tehran, Tehran 14395-515, Iran. pourfath@ut.ac.ir pourfath@iue.tuwien.ac.at.
Abstract:
van der Waals layered α-In2Se3 has shown out-of-plane ferroelectricity down to the bilayer and monolayer thicknesses at room temperature that can be switched by an applied electric field. This work addresses the missing theoretical framework through a comprehensive study on the layer-dependent electronic structure, ferroelectricity and the inter-layer interaction of α-In2Se3, by using first-principles density functional theory. Furthermore, surface states and their response to the built-in internal depolarizing field were carefully analyzed. Phase transition and Curie temperatures of 1L α-In2Se3 were studied by employing Monte Carlo and ab initio molecular dynamics simulations. The estimated Curie point is above room temperature, making 1L α-In2Se3 a promising candidate for future ultra-thin ferroelectric devices.
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