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Multi-Level Information Storage Using Engineered Electromechanical Resonances of Piezoelectric Wafers: A Concept
Christopher Hakoda1, Eric S Davis1, Cristian Pantea1
1Acoustics and Sensors Team, Materials Physics and Applications (MPA-11), Los Alamos National Laboratory, Los Alamos, NM 87545, USA.
Abstract:
A piezoelectric-based method for information storage is presented. It involves engineering the polarization profiles of multiple piezoelectric wafers to enhance/suppress specific electromechanical resonances. These enhanced/suppressed resonances can be used to represent multiple frequency-dependent bits, thus enabling multi-level information storage. This multi-level information storage is demonstrated by achieving three information states for a ternary encoding. Using the three information states, we present an approach to encode and decode information from a 2-by-3 array of piezoelectric wafers that we refer to as a concept Piezoelectric Quick Response (PQR) code. The scaling relation between the number of wafers used and the cumulative number of information states that can be achieved with the proposed methodology is briefly discussed. Potential applications of this methodology include tamper-evident devices, embedded product tags in manufacturing/inventory tracking, and additional layers of security with existing information storage technologies.

