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Updated: Dec 1, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
Experimental signature of a topological quantum dot
Marie S Rider1, Maria Sokolikova, Stephen M Hanham
1The Blackett Laboratory, Imperial College London, London SW7 2AZ, UK. marie.rider@ic.ac.uk.
Abstract:
Topological insulator nanoparticles (TINPs) host topologically protected Dirac surface states, just like their bulk counterparts. For TINPs of radius <100 nm, quantum confinement on the surface results in the discretization of the Dirac cone. This system of discrete energy levels is referred to as a topological quantum dot (TQD) with energy level spacing on the order of Terahertz (THz), which is tunable with material-type and particle size. The presence of these discretized energy levels in turn leads to a new electron-mediated phonon-light coupling in the THz range, and the resulting mode can be observed in the absorption cross-section of the TINPs. We present the first experimental evidence of this new quantum phenomenon in Bi2Te3 topological quantum dots, remarkably observed at room temperature.
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