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Updated: Nov 30, 2025

Shape Memory Polymers for Active Cell Culture

Shape Memory Polymers for Active Cell Culture

Published on: July 4, 2011

Amorphized length and variability in phase-change memory line cells.

Nafisa Noor¹, Sadid Muneer², Raihan Sayeed Khan³

¹Department of Electrical and Computer Engineering at North South University, Dhaka, Bangladesh.

Beilstein Journal of Nanotechnology

|November 12, 2020

Summary

This summary is machine-generated.

Researchers extracted the amorphized region length in phase-change memory cells using electrical measurements. This method provides critical dimensions for designing devices and has potential hardware security applications.

Keywords:

amorphous materials drift electrical breakdown electrical resistivity phase-change memory pulse measurement stochastic processes threshold switching

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Area of Science:

Materials Science
Electrical Engineering
Solid-State Physics

Background:

Amorphized region dimensions in phase-change memory (PCM) cells are crucial for device design.
Direct imaging of these dimensions is challenging.

Purpose of the Study:

To extract the length of amorphized regions in Ge2Sb2Te5 (GST) PCM line cells.
To correlate amorphized length with electrical characteristics.

Main Methods:

Electrical measurements were used to determine amorphized region length.
Cells were programmed to an amorphous state and subjected to voltage pulses.
Threshold switching voltage was measured to calculate amorphized length.

Main Results:

Amorphized length was successfully extracted from electrical measurements.
A general linear relationship was observed between threshold voltage and programmed resistance.
Significant variability in amorphized length was noted due to intrinsic material processes.

Conclusions:

Electrical measurements offer a viable method for determining amorphized region dimensions in GST PCM cells.
The variability in amorphized length can be leveraged for hardware security applications.