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Updated: Nov 30, 2025

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
Published on: July 17, 2015
Performance of a silicon-on-insulator direct electron detector in a low-voltage transmission electron microscope
Takafumi Ishida1,2, Akira Shinozaki2, Makoto Kuwahara1,2
1Institute of Materials and Systems for Sustainability, Nagoya University, Furo-cho, Nagoya, Chikusa 464-8601, Japan.
Abstract:
The performance of a direct electron detector using silicon-on-insulator (SOI) technology in a low-voltage transmission electron microscope (LVTEM) is evaluated. The modulation transfer function and detective quantum efficiency of the detector are measured under backside illumination. The SOI-type detector is demonstrated to have high sensitivity and high efficiency for the direct detection of low-energy electrons. The detector is thus considered suitable for low-dose imaging in an LVTEM.
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