Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

717
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
717
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

637
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
637
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

659
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
659
MOSFET Amplifiers01:17

MOSFET Amplifiers

354
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
354
Characteristics of MOSFET01:17

Characteristics of MOSFET

714
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
714
Biasing of FET01:22

Biasing of FET

523
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
523

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Conformally deposited ZnS nanoparticle capping layers for precise emission control in red/green/blue top-emitting quantum dot light-emitting diodes.

Optics express·2026
Same author

Near-Infrared Responsive Ionoelastomer Junction Enabling Switchable Ionic Logic Gate.

ACS nano·2025
Same author

Exciton reservoir-induced destabilization and reformation of polariton condensate.

Optics express·2025
Same author

Rewritable Triple-Mode Light-Emitting Display.

Nano-micro letters·2025
Same author

MAIR++: Improving Multi-View Attention Inverse Rendering With Implicit Lighting Representation.

IEEE transactions on pattern analysis and machine intelligence·2025
Same author

Lumbosacral transitional vertebrae in small-breed dogs: Prevalence, classification, and characteristics.

Veterinary radiology & ultrasound : the official journal of the American College of Veterinary Radiology and the International Veterinary Radiology Association·2024
Same journal

Turbulent flow in a vortex separator with a directed pipe inlet.

Scientific reports·2026
Same journal

Systematic characteristic evaluation of clay-based cementitious material derived from calcium carbide residue and waste tile powder.

Scientific reports·2026
Same journal

Retraction Note: Improvement of a rapid diagnostic application of monoclonal antibodies against avian influenza H7 subtype virus using Europium nanoparticles.

Scientific reports·2026
Same journal

Applying large language models to spam detection in the Kazakh low-resource language setting.

Scientific reports·2026
Same journal

An open-source 3D printing system enabling in-situ freeze-thaw processing of hydrogels.

Scientific reports·2026
Same journal

An enhanced EfficientNet framework for automated waste classification using cosine annealing and label smoothing.

Scientific reports·2026
See all related articles

Related Experiment Video

Updated: Nov 30, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.7K

Robust quantum point contact via trench gate modulation.

Dongsung T Park1, Seokyeong Lee1, Uhjin Kim2

  • 1Department of Physics, KAIST, Daejeon, 34141, Republic of Korea.

Scientific Reports
|November 13, 2020
PubMed
Summary
This summary is machine-generated.

A novel trench-gated quantum point contact (t-QPC) offers improved performance over conventional QPCs. The t-QPC demonstrates enhanced conductance and reduced anomalies under extreme conditions, advancing quantum device fabrication.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.2K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.1K

Related Experiment Videos

Last Updated: Nov 30, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
15:47

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots

Published on: November 1, 2013

16.7K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.2K
Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.1K

Area of Science:

  • Mesoscopic physics
  • Quantum device engineering
  • Condensed matter physics

Background:

  • Quantum point contacts (QPCs) are fundamental in mesoscopic physics and quantum devices.
  • Robust QPC operation under extreme conditions (high bias, magnetic fields) remains a challenge.

Purpose of the Study:

  • To analyze the performance of trench-gated QPCs (t-QPCs) compared to conventional QPCs (c-QPCs).
  • To investigate the potential of t-QPCs for improved quantum device functionality.

Main Methods:

  • Theoretical analysis using simulation and modeling of t-QPCs.
  • Experimental verification of predicted t-QPC characteristics.
  • Investigation in quantum Hall regimes.

Main Results:

  • t-QPCs exhibit larger and more uniform subband spacings over a wider transmission range than c-QPCs.
  • Maximal conductance is achievable in t-QPCs at high magnetic fields due to trench gate modulation.
  • t-QPCs show fewer anomalies in DC bias dependence, suggesting impurity effect suppression.

Conclusions:

  • The trench-gated QPC design offers significant advantages over conventional designs.
  • t-QPCs are promising for robust quantum devices operating under demanding conditions.
  • Further research into t-QPCs could lead to advancements in quantum technologies.