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Updated: Nov 30, 2025

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes
Published on: March 21, 2018
Phonon-based partition of (ZnSe-like) semiconductor mixed crystals on approach to their pressure-induced structural
M B Shoker1, Olivier Pagès2, V J B Torres3
1Université de Lorraine, LCP-A2MC, ER 4632, 57000, Metz, France.
Abstract:
The generic 1-bond → 2-mode "percolation-type" Raman signal inherent to the short bond of common A1-xBxC semiconductor mixed crystals with zincblende (cubic) structure is exploited as a sensitive "mesoscope" to explore how various ZnSe-based systems engage their pressure-induced structural transition (to rock-salt) at the sub-macroscopic scale-with a focus on Zn1-xCdxSe. The Raman doublet, that distinguishes between the AC- and BC-like environments of the short bond, is reactive to pressure: either it closes (Zn1-xBexSe, ZnSe1-xSx) or it opens (Zn1-xCdxSe), depending on the hardening rates of the two environments under pressure. A partition of II-VI and III-V mixed crystals is accordingly outlined. Of special interest is the "closure" case, in which the system resonantly stabilizes ante transition at its "exceptional point" corresponding to a virtual decoupling, by overdamping, of the two oscillators forming the Raman doublet. At this limit, the chain-connected bonds of the short species (taken as the minor one) freeze along the chain into a rigid backbone. This reveals a capacity behind alloying to reduce the thermal conductivity as well as the thermalization rate of photo-generated electrons.
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