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Electron backscattered diffraction using a new monolithic direct detector: High resolution and fast acquisition.

Fulin Wang1, McLean P Echlin1, Aidan A Taylor1

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A new detector enhances electron back-scattered diffraction (EBSD) analysis in scanning electron microscopes. This technology improves speed and accuracy for advanced materials characterization.

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Area of Science:

  • Materials Science
  • Physics
  • Analytical Chemistry

Background:

  • Electron Back-Scattered Diffraction (EBSD) is a crucial technique for materials characterization.
  • Existing EBSD detectors face limitations in speed and sensitivity at lower primary beam energies.
  • Optimization for primary beam energies in scanning electron microscopes is needed.

Purpose of the Study:

  • To implement a monolithic active pixel sensor (APS) based direct detector optimized for EBSD.
  • To enhance detection efficiency and diffraction pattern acquisition speed.
  • To enable advanced EBSD applications through high-resolution and high-speed capabilities.

Main Methods:

  • Development and implementation of a monolithic APS direct detector.
  • Optimization for primary beam energies from 4 keV to 28 keV.
  • Utilizing a sparse sampling mode with inpainting algorithms for rapid data acquisition.

Main Results:

  • High detection efficiency for Kikuchi bands across a wide energy range (4-28 keV), with optimal contrast at 8-16 keV.
  • Substantial improvement in diffraction pattern acquisition speed using sparse sampling and inpainting.
  • Demonstrated EBSD mapping speed of up to 5988 scan points per second with acceptable indexing accuracy.

Conclusions:

  • The developed detector offers high angular resolution and high-speed pattern acquisition simultaneously.
  • Facilitates advanced EBSD applications like lattice strain mapping, 3D-EBSD, and in situ studies.
  • Represents a significant advancement for sensitive and accurate materials characterization using EBSD.