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Types of Semiconductors01:20

Types of Semiconductors

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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Semiconductors01:22

Semiconductors

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There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
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Band Theory02:35

Band Theory

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When two or more atoms come together to form a molecule, their atomic orbitals combine and molecular orbitals of distinct energies result. In a solid, there are a large number of atoms, and therefore a large number of atomic orbitals that may be combined into molecular orbitals. These groups of molecular orbitals are so closely placed together to form continuous regions of energies, known as the bands.
The energy difference between these bands is known as the band gap.
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Fermi Level01:18

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The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
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Isolated atoms have discrete energy levels that are well described by the Bohr model. And, it quantifies the energy of an electron in a hydrogen atom as En. Higher quantum numbers 'n' yield less negative, closer electron energy levels.
 Band Formation:
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P-N junction

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A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
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Indium Nitride at the 2D Limit.

Béla Pécz1, Giuseppe Nicotra2, Filippo Giannazzo2

  • 1Centre for Energy Research, Institute for Technical Physics and Materials Science, Konkoly-Thege M. út 29-33, Budapest, 1121, Hungary.

Advanced Materials (Deerfield Beach, Fla.)
|November 23, 2020
PubMed
Summary

Researchers successfully synthesized two-dimensional Indium Nitride (2D InN) using an intercalation method. This breakthrough demonstrates a stable 2D InN material with a wide bandgap, paving the way for novel electronic and sensing applications.

Keywords:
2D semiconductorsSiC substratesepitaxial grapheneindium nitridemetal-organic chemical vapor depositionwide-bandgap materials

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Two-dimensional Indium Nitride (2D InN) is predicted to exhibit distinct properties compared to its bulk form, including strong excitons, high electron mobility, and potential for gas sensing.
  • The experimental realization of 2D InN has been a significant challenge, limiting its exploration and application.

Purpose of the Study:

  • To synthesize and characterize two-dimensional Indium Nitride (2D InN).
  • To measure the bandgap and assess the uniformity of the synthesized 2D InN.
  • To demonstrate the stabilization of 2D InN for potential applications.

Main Methods:

  • Utilized an intercalation process within metal-organic chemical vapor deposition (MOCVD) to form bilayer InN between graphene and Silicon Carbide (SiC).
  • Employed conductive atomic force microscopy (C-AFM) for thickness uniformity analysis.
  • Conducted atomic resolution transmission electron microscopy (TEM) for structural property investigation.
  • Performed scanning tunneling spectroscopy (STS) to determine the bandgap of the 2D InN.

Main Results:

  • Achieved high surface coverage (above 90%) of 2D InN on SiC, primarily consisting of two indium (In) and nitrogen (N) sub-layers.
  • Measured a bandgap of 2 ± 0.1 eV for the 2D InN using STS.
  • Demonstrated high lateral uniformity in the intercalation structure.

Conclusions:

  • Successfully synthesized and stabilized two-dimensional Indium Nitride (2D InN).
  • The synthesized 2D InN exhibits a pragmatic wide bandgap and high lateral uniformity.
  • This achievement opens avenues for exploring the unique electronic and optical properties of 2D InN in various applications.