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High-Uniformity Threshold Switching HfO2-Based Selectors with Patterned Ag Nanodots.

Yujia Li1,2, Jianshi Tang1,3, Bin Gao1,3

  • 1Institute of Microelectronics Beijing Innovation Center for Future Chips (ICFC) Tsinghua University Beijing 100084 China.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|November 26, 2020
PubMed
Summary

Fabricating high-uniformity Hafnium oxide (HfO2)-based threshold switching selectors using patterned silver nanodots (NDs) enhances device performance. This advancement is crucial for high-density nonvolatile memories and neuromorphic computing applications.

Keywords:
Ag nanodotshigh‐uniformityone‐selector‐one‐resistor (1S1R)selectorsthreshold switching

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Nanotechnology

Background:

  • High-performance selector devices are critical for advanced nonvolatile memory and neuromorphic computing.
  • Device uniformity remains a significant challenge for practical applications of threshold switching selectors.

Purpose of the Study:

  • To fabricate highly uniform Hafnium oxide (HfO2)-based threshold switching selectors.
  • To improve the performance and reliability of selector devices for memory and computing applications.

Main Methods:

  • Utilized e-beam lithography to pattern controllable silver nanodots (NDs) with uniform size and high order in the cross-point region.
  • Fabricated HfO2-based selectors incorporating these patterned Ag NDs.
  • Characterized the electrical performance, including leakage current, on/off ratio, endurance, and switching speed.

Main Results:

  • Achieved excellent bidirectional threshold switching performance: low leakage current (<1 pA), high on/off ratio (>10^8), high endurance (>10^8 cycles), and fast switching speed (≈75 ns).
  • Demonstrated significantly reduced cycle-to-cycle and device-to-device variations (C_V < 10%) compared to control samples.
  • Successfully integrated Ag NDs selectors into a one-selector-one-resistor (1S1R) structure, reducing the bit error rate in crossbar arrays.

Conclusions:

  • Patterned Ag NDs enable control over filament formation, leading to reproducible and uniform threshold switching behavior.
  • High-uniformity Ag NDs selectors are promising for fabricating large-scale 1S1R crossbar arrays for future memory and neuromorphic computing.