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Growth of Homogeneous Luminescent Silicon-Terbium Nanowires by One-Step Electrodeposition in Ionic Liquids
Shibin Thomas1, Jeremy Mallet1, Bijal K Bahuleyan2
1Laboratoire de Recherche en Nanosciences, LRN EA4682, Université de Reims Champagne-Ardenne, Campus Moulin de la Housse, 51687 Reims, France.
Abstract:
An electrodeposition method for the growth of homogeneous silicon-terbium nanowires (NWs) with green light emission is described. The method involves template-assisted electrochemical co-deposition of Si/Tb NWs with 90-nm diameter from an electrolyte bath containing Si and Tb precursors in an ionic liquid (IL). This method of deposition is advantageous over other conventional techniques as it is relatively simple and cost-effective and avoids harsh deposition conditions. The deposited NWs are of uniform dimensions with homogeneous composition incorporating 10% of Tb and exhibit intense room temperature (RT) luminescence in the visible range due to Tb emission. These results were confirmed by combining classical characterization such as scanning electron microscopy (SEM) and photoluminescence (PL) performed on an assembly of NWs with spatially resolved experiments such as transmission electron microscopy (TEM) and cathodoluminescence (CL). This electrodeposition method provides an alternative and extremely simple approach for depositing silicon-rare earth nanostructures for optical and sensing applications.

