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Electron Traversal Times in Disordered Graphene Nanoribbons
Michael Ridley1, Michael A Sentef2, Riku Tuovinen2
1The Raymond and Beverley Sackler Center for Computational Molecular and Materials Science, Tel Aviv University, Tel Aviv 6997801, Israel.
We studied electron traversal times in graphene nanoribbon (GNR) molecular junctions. Electron transit signatures depend on GNR disorder and orientation, informing GNR device design.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Quantum Transport
Background:
- Graphene nanoribbons (GNRs) are promising materials for electronic devices.
- Understanding electron transport dynamics is crucial for device performance.
- Molecular junctions offer tunable electronic properties.
Purpose of the Study:
- To investigate electron traversal times in GNR molecular junctions.
- To analyze the impact of disorder and orientation on electron transport.
- To provide insights for designing high-frequency GNR-based devices.
Main Methods:
- Utilizing the partition-free time-dependent Landauer-Büttiker formalism.
- Calculating transient current correlations.
- Simulating electron transport across GNR molecular junctions.
Main Results:
- Electron traversal times exhibit distinct signatures.
- These signatures are sensitive to the degree of disorder in the GNR.
- Electron transit behavior varies with the GNR's orientation.
- Demonstrated correlation between traversal times and device operational frequencies.
Conclusions:
- Electron traversal in GNR junctions is influenced by structural disorder and orientation.
- These findings are relevant for optimizing the operational frequencies of GNR devices.
- Provides a pathway for the rational design of advanced GNR-based electronic components.
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