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Decoupling between metal-insulator transition and structural phase transition in an interface-engineered VO2.

Yanda Ji1, Lei Cheng1, Ning Li2

  • 1Department of Applied Physics, College of Science, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu, 211106, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|December 7, 2020
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In vanadium dioxide (VO2) films, the metal-insulator transition (MIT) unexpectedly decouples from the structural phase transition (SPT). This finding challenges previous understandings of VO2’s behavior and offers new insights into interfacial interactions.

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • The coupling between metal-insulator transition (MIT) and structural phase transition (SPT) in vanadium dioxide (VO2) is a long-standing research topic.
  • VO2 is often considered a non-standard Mott-Hubbard system where electron-lattice and electron-electron interactions coexist, driving MIT and SPT.
  • The influence of strain in strongly correlated systems necessitates exploring interface-engineered VO2 for a deeper understanding.

Purpose of the Study:

  • To investigate carrier dynamics in interface-engineered VO2 films exhibiting anomalous MIT.
  • To explore the relationship between MIT and SPT in strained VO2 thin films.
  • To elucidate the mechanisms behind the decoupled MIT and SPT.

Main Methods:

  • Time-resolved transient differential reflectivity measurements were employed.
  • Carrier dynamics in VO2 films were analyzed.
  • The behavior of MIT and SPT was observed during heating.

Main Results:

  • An unexpected decoupling of MIT from SPT was observed in interface-engineered VO2 films.
  • MIT was found to be triggered by bandgap recombination below 75 °C.
  • SPT-induced signals appeared separately between 70 °C and 100 °C, distinct from the MIT onset.

Conclusions:

  • The decoupling of MIT and SPT in interface-engineered VO2 challenges the conventional view of their cooperative behavior.
  • This decoupling provides crucial insights into the role of interfacial interactions in modulating phase transitions in VO2 thin films.
  • The findings open new avenues for controlling and utilizing VO2 properties in electronic devices.