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Updated: Nov 25, 2025

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
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Multi-Physical Models of Bending Characteristics on the Double-Clamped Beam Switch for Flexible Electronic Devices
Lei Han1, Lijun Chen1, Ruijie Qin1
1Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096, China.
Abstract:
In this paper, multi-physical models of bending characteristics, including the static, dynamic and microwave models, are firstly proposed for the double-clamped beam switch based on flexible substrate. Both simulated and experimental verification have been carried out to prove that the changing regularity of the driving voltage and time of the switch is inversely proportional with the increase in the bending curvature of the flexible substrate. The microwave performance of the switch at the ON state is found to get worse with the increase in the bending curvature. The measured results indicate that when the bending curvature increases from 0 m-1 to 28.6 m-1, the measured driving voltage decreases from 90.0 V to 72.6 V with the error of 5.9% compared with the calculated results. The measured driving time decreases from 52.4 μs to 35.6 μs with the error of 16.7% compared with the calculated results. When the substrate bending curvature increases from 0 m-1 to 28.6 m-1, the measured reflection loss S11 of the switch gradually deteriorates from -27.1 dB to -22.0 dB with the error of 1.3 dB corresponding to the calculated results at 10 GHz. All the simulated and experimental results are consistent with the theoretical calculated results.
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