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Doping Effect on Cu2Se Thermoelectric Performance: A Review
Yuanhao Qin1, Liangliang Yang1,2, Jiangtao Wei2
1College of Microelectronics and Research Center of Materials and Optoelectronics, University of Chinese Academy of Sciences, Beijing 100049, China.
Abstract:
Cu2Se, owing to its intrinsic excellent thermoelectric (TE) performance emerging from the peculiar nature of "liquid-like" Cu+ ions, has been regarded as one of the most promising thermoelectric materials recently. However, the commercial use is still something far from reach unless effective approaches can be applied to further increase the figure of merit (ZT) of Cu2Se, and doping has shown wide development prospect. Until now, the highest ZT value of 2.62 has been achieved in Al doped samples, which is twice as much as the original pure Cu2Se. Herein, various doping elements from all main groups and some transitional groups that have been used as dopants in enhancing the TE performance of Cu2Se are summarized, and the mechanisms of TE performance enhancement are analyzed. In addition, points of great concern for further enhancing the TE performance of doped Cu2Se are proposed.
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