Related Experiment Video
Updated: Nov 25, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Large power dissipation of hot Dirac fermions in twisted bilayer graphene
1Department of Physics, K L E Technological University, Hubballi-580031, Karnataka, India.
Abstract:
We have carried out a theoretical investigation of hot electron power loss P, involving electron-acoustic phonon interaction, as a function of twist angle θ, electron temperature T e and electron density n s in twisted bilayer graphene. It is found that as θ decreases closer to magic angle θ m, P enhances strongly and θ acts as an important tunable parameter, apart from T e and n s. In the range of T e = 1-50 K, this enhancement is ∼250-450 times the P in monolayer graphene (MLG), which is manifestation of the great suppression of Fermi velocity v F * of electrons in moiré flat band. As θ increases away from θ m, the impact of θ on P decreases, tending to that of MLG at θ ∼ 3°. In the Bloch-Grüneisen (BG) regime, P ∼ T e 4, n s -1/2 and v F *-2. In the higher temperature region (∼10-50 K), P ∼ T e δ , with δ ∼ 2.0, and the behavior is still super linear in T e, unlike the phonon limited linear-in-T (lattice temperature) resistivity ρ p. P is weakly, decreasing (increasing) with increasing n s at lower (higher) T e, as found in MLG. The energy relaxation time τ e is also discussed as a function of θ and T e. Expressing the power loss P = F e(T e) - F e(T), in the BG regime, we have obtained a simple and useful relation F e(T)μ p(T) = (ev s 2/2) i.e. F e(T) = (n s e 2 v s 2/2)ρ p, where μ p is the acoustic phonon limited mobility and v s is the acoustic phonon velocity. The ρ p estimated from this relation using our calculated F e(T) is nearly agreeing with the ρ p of Wu et al (2019 Phys. Rev. B 99 165112).
Related Concept Videos
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Gauss's Law in Dielectrics
Fermi Level
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Induced Electric Dipoles
Since the absolute value of potential energy holds no physical meaning, its zero value can be chosen as per...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...

