Related Experiment Video
Updated: Nov 24, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Exploring the Efficient Na/K Storage Mechanism and Vacancy Defect-Boosted Li+ Diffusion Based on VSe2/MoSe2
Jing Yang1, Jinda Luo1, Yi Kuang1
1Key Laboratory of Low Dimensional Materials & Application Technology of Ministry of Education, School of Materials Science and Engineering, Xiangtan University, Xiangtan 411105, Hunan, China.
Abstract:
As typical 2D materials, VSe2 and MoSe2 both play a complementary role in Li/Na/K storage. Therefore, we designed and optimized the VSe2/MoSe2 heterostructure to gain highly efficient Li/Na/K-ion batteries. Most importantly, achieving fast Li/Na/K-ion diffusion kinetics in the interlayer of VSe2/MoSe2 is a key point. First of all, first-principles calculations were carried out to systematically investigate the packing structure, mechanical properties, band structure, and Li/Na/K storage mechanism. Our calculated results suggest that a large interlayer spacing (3.80 Å), robust structure, and metallic character pave the way for achieving excellent charge-discharge performance for the VSe2/MoSe2 heterostructure. Moreover, V and Mo ions both suffer a very mild redox reaction even if Li/Na/K ions fill the interlayer space. These structures were all further verified to show thermal stability (300 K) by means of the AIMD method. By analyzing the Li/Na/K diffusion behavior and the effect of vacancy defect on the structural stability and energy barrier for Li interlayer diffusion, it is found that the VSe2/MoSe2 heterostructure exhibits very low-energy barriers for Na/K interlayer diffusion (0.21 eV for Na and 0.11 eV for K). Compared with the VSe2/MoSe2 heterostructure, the V0.92Se1.84/MoSe2 heterostructure not only can still maintain a stable structure and metallic character but also has much lower energy barrier for Li interlayer diffusion (0.07 vs 0.48 eV). These discoveries also break new ground to eliminate the obstacles preventing Li+ diffusion in the interlayer of other heterostructure materials. Besides, both VSe2/MoSe2 and V0.92Se1.84/MoSe2 heterostructures have low average open-circuit voltage (OCV) values during Li/Na/K interlayer diffusion (1.07 V for V0.92Se1.84/MoSe2 vs Li+, 0.86 V for VSe2/MoSe2 vs Na+, and 0.54 V for VSe2/MoSe2 vs K+), such low OCV values are beneficial for anode materials with excellent electrochemical properties. The above findings offer a new route to design anode materials for Li/Na/K-ion batteries.
Related Concept Videos
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Trends in Lattice Energy: Ion Size and Charge
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...

