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Updated: Nov 24, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
08:12

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

Published on: December 5, 2015

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Bi2O2Se for broadband terahertz wave switching

Zhe Wen Li, Jiu-Sheng Li

    Applied Optics
    |December 28, 2020
    PubMed
    Summary

    Researchers developed a novel terahertz wave switch using a Bismuth Oxy-Selenide (Bi2O2Se)/Silicon structure. This device achieves fast switching speeds and high extinction ratios for dynamic terahertz wave manipulation.

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