Magnetotransport in hybrid InSe/monolayer graphene on SiC

Area of Science:

• Condensed Matter Physics
• Materials Science
• Nanotechnology

Background:

• Monolayer graphene on silicon carbide (SiC) exhibits unique electronic properties.
• Modifying graphene's electronic characteristics is crucial for advanced applications.
• Graphene on SiC faces challenges in electrostatic gating due to dielectric limitations.

Purpose of the Study:

• To investigate the magnetotransport properties of a hybrid InSe/monolayer graphene/SiC system.
• To explore how van der Waals heterostructures influence graphene's electronic parameters.
• To establish a method for tuning electron-electron interactions in graphene.

Main Methods:

• Systematic study of magnetotransport properties.
• Analysis of Hall slope (R_H) temperature dependence.
• Investigation of resistivity minima under varying magnetic fields and temperatures.

Main Results:

• The InSe/graphene heterostructure allows effective modification of carrier density, mobility, and effective mass compared to bare graphene.
• Logarithmic temperature dependence of the Hall slope (lnT) can probe electron-electron (e-e) interactions, even when resistivity does not show this dependence.
• The method confirms e-e interaction effects are influenced by weak disorder in the hybrid system.

Conclusions:

• Capping van der Waals materials like InSe on graphene provides an effective route to tune electronic properties.
• This approach circumvents challenges associated with traditional gating methods for graphene on SiC.
• The findings offer a new strategy for engineering graphene-based electronic devices.