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Photoelectric Effect02:26

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When light of a particular wavelength strikes a metal surface, electrons are emitted. This is called the photoelectric effect. The minimum frequency of light that can cause such emission of electrons is called the threshold frequency, which is specific to the metal. Light with a frequency lower than the threshold frequency, even if it is of high intensity, cannot initiate the emission of electrons. However, when the frequency is higher than the threshold value, the number of electrons ejected...
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Phase change material based hot electron photodetection.

Sandeep Kumar Chamoli1, Gopal Verma2, Subhash C Singh3

  • 1The Guo Photonics Laboratory, State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China. gopal@ciomp.ac.cn and University of Chinese Academy of Science, Beijing 100039, China. chamolisandeep28@mails.ucas.ac.cn and The Institute of Optics, University of Rochester, Rochester, New York 14627, USA. ssingh49@ur.rochester.edu guo@optics.rochester.edu.

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|January 7, 2021
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Summary
This summary is machine-generated.

We developed a novel tunable hot electron photodetector using a phase change material, antimony trisulfide. This device offers enhanced sensitivity and broad spectral tunability for advanced photonic applications.

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Area of Science:

  • Optoelectronics
  • Materials Science
  • Nanotechnology

Background:

  • Phase change materials (PCMs) offer tunable optical properties crucial for advanced photodetector designs.
  • Metal-dielectric-metal (MDM) cavities enable efficient light confinement and manipulation.
  • Hot electron photodetectors (HEPDs) are promising for high-sensitivity photodetection.

Purpose of the Study:

  • To introduce a novel tunable HEPD based on a PCM-integrated MDM cavity.
  • To investigate the impact of antimony trisulfide (Sb2S3) phase transitions on device performance.
  • To explore the potential for enhanced responsivity and broad spectral tunability.

Main Methods:

  • Fabrication of an Au-Sb2S3-Au MDM cavity.
  • Characterization of Sb2S3 phase transitions (crystalline to amorphous) and their effect on bandgap and Schottky barrier height.
  • Optical simulations to predict absorption and responsivity across different spectral ranges.
  • Integration of vanadium dioxide (VO2) for enhanced tunability.

Main Results:

  • The Sb2S3-based HEPD exhibits tunable absorption from 604 nm to 3542 nm.
  • Maximum responsivities of 20 mA W⁻¹ (single cavity) and 24 mA W⁻¹ (double cavity) were predicted.
  • A reversible, ultrafast (70 ns) phase transition in Sb2S3 was demonstrated.
  • Integration of VO2 increased responsivity by up to 50%.

Conclusions:

  • The proposed PCM-based MDM cavity is a highly efficient and tunable HEPD.
  • Sb2S3's tunable properties and low Schottky barrier with Au are key to high performance.
  • The device shows potential for optical filters, switches, solar absorbers, and energy applications.