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Updated: Nov 22, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Large-area synthesis of transition metal dichalcogenides via CVD and solution-based approaches and their device
Anh Tuan Hoang1, Kairui Qu2, Xiang Chen2
1School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea. ahnj@yonsei.ac.kr.
Abstract:
For the last decade, two-dimensional transition metal dichalcogenides (TMDCs) have attracted considerable attention due to their unique physical and chemical properties. Novel devices based on these materials are commonly fabricated using the exfoliated samples, which lacks control of the thickness and cannot be scaled. Therefore, the synthesis of large-area TMDC thin films with a high uniformity to advance the field is required. This article reviews the latest advances in the synthesis of wafer-scale thin films using chemical vapor deposition methods. The key factors that determine the electrical performance of TMDCs are introduced, including the interfacial properties and defects. The latest solution-based techniques which suggest the opportunity to obtain large-area TMDC thin films with a low-cost process and the potential applications in electronics and optoelectronics are also discussed. The outlook for future research directions, challenges, and possible development of 2D materials are further discussed.

