Magnetoelectric Coupling in Multiferroic Bilayer VS_{2}

Area of Science:

• Condensed Matter Physics
• Materials Science
• Solid-State Chemistry

Background:

• Multiferroic materials exhibiting magnetoelectric coupling are crucial for advanced electronic devices.
• Two-dimensional materials offer unique properties due to their reduced dimensionality.
• Vanadium disulfide (VS_{2}) bilayers present a promising platform for exploring novel multiferroic phenomena.

Purpose of the Study:

• To investigate the magnetoelectric coupling effect in two-dimensional multiferroic bilayer VS_{2}.
• To understand the relationship between ferroelectricity, antiferromagnetism, and structural properties.
• To explore the potential for electronic control of magnetism in this material.

Main Methods:

• First-principles calculations were employed to predict and analyze the material's properties.
• The study focused on the ground-state 3R-type stacking of VS_{2} bilayers.
• Analysis included investigation of symmetry breaking, polarization reversal, magnetic ordering, and magnetoelectric coupling mechanisms.

Main Results:

• The 3R-type stacking of bilayer VS_{2} breaks space inversion symmetry, leading to perpendicular spontaneous polarization.
• Ferroelectric polarization can be reversed via interlayer sliding.
• Antiferromagnetic ordering within layers couples with ferroelectricity via a ferrovalley, enabling electronic control of magnetism.
• Reducing interlayer distance generates a net magnetic moment.
• Linear and second-order nonlinear magnetoelectric coupling were observed under an electric field.

Conclusions:

• Bilayer VS_{2} exhibits significant magnetoelectric coupling effects, making it a promising two-dimensional multiferroic material.
• The interplay between ferroelectricity, antiferromagnetism, and structural configurations allows for electric field control of magnetic properties.
• This discovery opens avenues for designing novel spintronic and memory devices based on van der Waals heterostructures.