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Updated: Nov 21, 2025

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Omer Arif1, Valentina Zannier1, Francesca Rossi2
1NEST, Istituto Nanoscienze-CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy.
Researchers developed self-catalyzed InAs/InSb/InAs nanowires with InSb quantum dots on silicon. Growth temperature and arsenic pressure control nanowire morphology, crucial for quantum structure development.
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