Related Experiment Video
Updated: Nov 20, 2025

Inkjet Printing All Inorganic Halide Perovskite Inks for Photovoltaic Applications
Published on: January 22, 2019
Elucidation of Quantum-Well-Specific Carrier Mobilities in Layered Perovskites
Ninghao Zhou1, Zhenyu Ouyang1, Liang Yan1
1Department of Chemistry, University of North Carolina at Chapel Hill, Chapel Hill, North Carolina 27599, United States.
Abstract:
Layered organohalide perovskite films consist of quantum wells with concentration distributions tailored to enhance long-range charge transport. Whereas cascaded energy and charge funneling behaviors have been detected with conventional optical spectroscopies, it is not clear that such dynamics contribute to the efficiencies of photovoltaic cells. In this Letter, we use nonlinear photocurrent spectroscopy to selectively target charge transport processes within devices based on layered perovskite quantum wells. The photocurrent induced by a pair of laser pulses is directly measured in this "action" spectroscopy to remove ambiguities in signal interpretation. By varying the external bias, we determine carrier mobilities for quantum-well-specific trajectories taken through the active layers of the devices. The results suggest that the largest quantum wells are primarily responsible for photocurrent production, whereas the smallest quantum wells trap charge carriers and are a major source of energy loss in photovoltaic cells.
Related Concept Videos
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
P-N junction
Types of Semiconductors
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

