Related Experiment Video
Updated: Nov 20, 2025

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Experimental determination of charge carrier dynamics in carbon nitride heterojunctions
Emma Mitchell1, Abigail Law, Robert Godin
1Department of Chemistry, The University of British Columbia, 3247 University Way, Kelowna, BC, V1V 1V7, Canada.
Abstract:
Carbon nitride (CNx) is an emerging photocatalyst with the potential to efficiently produce solar fuels. CNx heterojunctions often show significant photocatalytic activity improvements. We review the charge carrier dynamics in a range of CNx heterojunctions including carbon-based material, black phosphorus, Ru complexes, molybdenum sulphide and metal phosphides. Time resolved photoluminescence (TRPL) and transient absorption spectroscopy (TAS) were the most common techniques employed for experimental charge carrier dynamics measurements. The low photoluminescence quantum yield of CNx appeared to limit the depth of conclusions from TRPL, with both lengthening and shortening of the TRPL lifetimes observed and attributed to enhanced charge separation. Overall, the charge carrier dynamics studies often showed a relative lifetime change of ∼2-fold and an activity improvement of >10-fold. We highlight the need for the use of a wider range of techniques to monitor the charge carrier dynamics for conclusive determination of photophysics-activity relationships and elucidation of improvement mechanisms.
More Related Videos
Related Concept Videos
P-N junction
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Biasing of Metal-Semiconductor Junctions
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
Types of Semiconductors

