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Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

666
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
666
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
430

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Gallium-Enhanced Aluminum and Copper Electromigration Performance for Flexible Electronics.

Saeedeh Ravandi1, Alexey Minenkov2, Cezarina Cela Mardare1,3

  • 1Institute of Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040 Linz, Austria.

ACS Applied Materials & Interfaces
|January 25, 2021
PubMed
Summary

Researchers screened aluminum (Al), copper (Cu), and gallium (Ga) alloys to find materials that resist electromigration. Al-Ga and Cu-Ga alloys show promise for durable electronic interconnects, especially on flexible substrates.

Keywords:
combinatorial librariesflexible electronicshigh throughput screeninglow resistance alloysmetallic thin films

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Electrical Engineering

Background:

  • Electromigration is a major failure mechanism in microelectronic interconnects.
  • Developing materials with enhanced electromigration resistance is crucial for high-current and high-power electronics.
  • Alloying is a common strategy to improve material properties for electronic applications.

Purpose of the Study:

  • To screen binary and ternary thin film alloys of Al, Cu, and Ga for enhanced electromigration resistance.
  • To identify specific alloy compositions suitable for replacing pure Al or Cu in electronic interconnects.
  • To evaluate the performance of promising alloys on both rigid (SiO2) and flexible (PEN) substrates.

Main Methods:

  • Fabrication of combinatorial thin film libraries using lithography and vacuum co-deposition.
  • High-throughput screening via automated current-voltage measurements to determine electrical failure thresholds.
  • Analysis of electromigration mechanisms, focusing on grain boundary dynamics influenced by electron flux and atomic concentration gradients.
  • Characterization of film adhesion and electrical properties on various substrates.

Main Results:

  • Al-8 at.% Ga and Cu-5 at.% Ga were identified as promising alloys for improved electromigration resistance.
  • Alloying with Ga enhanced film adhesion to polyethylene naphthalate (PEN) flexible substrates.
  • Al-8 at.% Ga demonstrated a nearly 50% increase in electromigration suppression compared to pure Al on PEN substrates.
  • Cu-5 at.% Ga exhibited over 100% increase in maximum current density compared to pure Cu on both SiO2 and PEN substrates.

Conclusions:

  • Al-8 at.% Ga and Cu-5 at.% Ga alloys offer superior electromigration resistance and current carrying capacity compared to pure Al and Cu.
  • These alloys are suitable for interconnect applications in high-current/power electronics and flexible electronics.
  • Gallium alloying provides a viable route to enhance the reliability and performance of metallic interconnects.