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Gate-Tunable Fractional Chern Insulators in Twisted Double Bilayer Graphene
Zhao Liu1, Ahmed Abouelkomsan2, Emil J Bergholtz2
1Zhejiang Institute of Modern Physics, Zhejiang University, Hangzhou 310027, China.
Physical Review Letters
|January 29, 2021
Abstract:
We predict twisted double bilayer graphene to be a versatile platform for the realization of fractional Chern insulators readily targeted by tuning the gate potential and the twist angle. Remarkably, these topologically ordered states of matter, including spin singlet Halperin states and spin polarized states in Chern number C=1 and C=2 bands, occur at high temperatures and without the need for an external magnetic field.
