Benchmarking monolayer MoS₂ and WS₂ field-effect transistors

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Two-dimensional (2D) transition metal dichalcogenides (TMDs) like MoS2 and WS2 are promising for next-generation electronics.
• Benchmarking device-to-device variation is crucial for assessing the manufacturability of 2D field-effect transistors (FETs).

Purpose of the Study:

• To benchmark device-to-device variation in MoS2 and WS2 monolayer FETs.
• To evaluate the performance of these 2D FETs against ultra-thin body silicon FETs and existing literature.
• To confirm the technological viability of 2D TMD FETs for integrated circuits.

Main Methods:

• Grown MoS2 and WS2 films using metal-organic chemical vapor deposition (MOCVD).
• Fabricated and statistically analyzed 230 MoS2 FETs and 160 WS2 FETs with channel lengths from 5 μm down to 100 nm.
• Evaluated key FET performance indicators, including carrier mobility.

Main Results:

• Demonstrated consistent performance across 1x1 cm2 chips for both MoS2 and WS2 FETs.
• Achieved a record high carrier mobility of 33 cm2 V-1 s-1 in WS2 FETs, a 1.5x improvement over previous reports.
• Showcased high-quality, uniform growth and clean transfer processes for the 2D TMDs.

Conclusions:

• MoS2 and WS2 FETs exhibit consistent performance, indicating high-quality material growth and fabrication.
• The achieved carrier mobility in WS2 FETs surpasses existing records, highlighting their superior electronic properties.
• These findings strongly support the technological readiness of 2D TMD FETs for integration into future electronic devices.