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Band-Gap Tunability in Partially Amorphous Silicon Nanoparticles Using Single-Dot Correlative Microscopy.

Chia-Ching Huang¹, Yingying Tang¹, Marco van der Laan¹

¹Institute of Physics, University of Amsterdam, Science Park 904, 1098 XH Amsterdam, The Netherlands.

ACS Applied Nano Materials

|February 1, 2021

Summary

The optical band gap of silicon nanoparticles (Si-NPs) is determined by their amorphous shell, not their size. This finding explains limited emission tunability in Si-NPs and highlights the need for single-dot microscopy.

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Published on: January 19, 2018

Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

Silicon nanoparticles (Si-NPs) exhibit complex optical properties due to core and surface chemistry.
Predicting and observing the full spectral range of band-gap tunability in Si-NPs remains challenging.

Purpose of the Study:

To directly assess the size dependence of the optical band gap in individual Si-NPs.
To elucidate the role of core and surface structure on Si-NP optical properties.

Main Methods:

Utilized a single-dot correlative microscopy tool combining Atomic Force Microscopy (AFM) for size measurement and single-dot photoluminescence for band gap evaluation.
Analyzed 2-8 nm alkyl-capped Si-NPs prepared via sol-gel and high-temperature annealing (1300 °C).

Main Results:

The optical band gap of Si-NPs was found to be governed by the amorphous shell, not the nanoparticle size.
Observed convergence of the size-dependent optical band gap towards the amorphous silicon band gap (~1.56 eV).

Conclusions:

Structural disorder in the amorphous shell is likely responsible for the limited emission tunability reported for Si-NPs.
Emphasizes the critical need for direct correlative single-dot microscopy methods to accurately determine Si-NP properties, avoiding misinterpretations from ensemble measurements.