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Updated: Nov 19, 2025

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Concomitant induction to few-layer and 1T-rich two-dimensional MoS2 by rigid segment-containing polysulfide as a
Yijuan Wang1, Jianzhi Wang, Jie Liu
1Key Laboratory for Green Chemical Process of Ministry of Education, Hubei Key Laboratory for Novel Reactor and Green Chemistry Technology and School of Chemical Engineering and Pharmacy, Wuhan Institute of Technology, Wuhan 430205, P. R. China. fyu@wit.edu.cn fyuwucn@gmail.com.
Abstract:
Few-layer and 1T-rich MoS2 is synthesized by a one-step solvothermal process using a rigid segment-containing polysulfide as a concomitant sulfur source and in situ intercalator. The prepared MoS2 displays superior hydrogen evolution reaction activity, providing a facile and mild approach for the development of high performing MoS2 and other two-dimensional lamellar materials.
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