Utilizing the Diffusion of Fluorinated Polymers to Modify the Semiconductor/Dielectric Interface in...

Area of Science:

• Materials Science
• Organic Electronics
• Surface Chemistry

Background:

• Tailoring semiconductor/dielectric interfaces with fluorinated polymers enhances organic field-effect transistor (OFET) performance.
• Fabricating bottom-gate OFETs on fluorinated dielectrics via solution processing is challenging due to poor wettability.

Purpose of the Study:

• To develop a solution-processed method for fabricating bottom-gate OFETs using a fluorinated polymer interface.
• To investigate the effect of a fluorinated poly(methyl methacrylate) (PMMA) interface on poly(3-hexylthiophene) (P3HT) based OFETs.

Main Methods:

• Utilized the diffusion of fluorinated PMMA to create a fluorine-rich interface.
• Fabricated bottom-gate OFET devices with a solution-processed P3HT semiconductor layer.
• Analyzed the impact of the modified interface on charge trap density and P3HT orientation.

Main Results:

• Fluorinated dielectrics effectively reduced charge trap density at the semiconductor/dielectric interface.
• Promoted edge-on orientation of P3HT on the dielectric surface.
• OFET devices with fluorinated PMMA modified dielectrics showed higher carrier mobility and improved electrical stability compared to fluorine-free devices.

Conclusions:

• The study presents a novel strategy for interface engineering in OFETs using fluorinated PMMA.
• This approach facilitates the solution-processed fabrication of high-performance bottom-gate OFETs.
• The findings offer a pathway to further advance OFET device performance through interface optimization.