A RF Redundant TSV Interconnection for High Resistance Si Interposer

Area of Science:

• Electrical Engineering
• Materials Science
• Semiconductor Devices

Background:

• Through Silicon Via (TSV) technology is essential for high-performance, compact, and integrated electronic systems.
• The increasing demand for 5G and millimeter-wave radar necessitates advanced interconnect solutions for radio frequency system-in-package (RF SIP) substrates.

Purpose of the Study:

• To present and verify a novel redundant TSV interconnect design for high resistivity silicon interposers.
• To evaluate the high-frequency transmission performance and reliability of redundant TSV structures at millimeter-wave frequencies.

Main Methods:

• Design and simulation of test structures with single, dual, and quad redundant TSV interconnects using HFSS software.
• Development of a modified equivalent circuit model to analyze the impact of redundant TSVs on high-frequency performance.
• Fabrication of TSV samples and experimental testing using the L-2L de-embedding method to extract S-parameters.

Main Results:

• Simulations confirmed that redundant TSVs maintain functionality at 44 GHz even after a failure.
• Experimental results showed low insertion loss for dual (0.19 dB) and quad (0.46 dB) redundant TSVs at 40 GHz.
• The redundant TSV design demonstrated feasibility for millimeter-wave applications.

Conclusions:

• Redundant TSV interconnects offer a robust solution for high-frequency millimeter-wave applications.
• This design enhances reliability and maintains performance in RF SIP substrates, supporting advancements in 5G and radar technology.