Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

600
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
600
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

624
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
624
Characteristics of MOSFET01:17

Characteristics of MOSFET

668
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
668
Biasing of FET01:22

Biasing of FET

467
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
467
Field Effect Transistor01:29

Field Effect Transistor

801
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
801
MOSFET Amplifiers01:17

MOSFET Amplifiers

312
The MOSFET, when operating in its active region, functions as a voltage-controlled current source. In this region, the gate-to-source voltage controls the drain current. This principle underlies the operation of the transconductance MOSFET amplifier. The output current is directed through a load resistor to convert this amplifier into a voltage amplifier. The output voltage is then obtained by subtracting the voltage drop across the load resistance from the supply voltage. This process results...
312

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

On-Water Surface Synthesis of 2D Conjugated Metal-Organic Framework Films With Controllable Layer Orientation Enabling High-Performance Chemiresistive Sensing.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Ultranarrow nanochannels in a staggered two-dimensional polymer membrane enhance electric double-layer coverage for osmotic energy harvesting.

Nature communications·2026
Same author

Leaftronics: Bio-Fractal Scaffolds From Leaf Venation for Low-Waste Electronics.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Conductive Hydrogels for Exogenous Sensing and Cell Fate Control.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Near-unity broadband photonic metamaterial absorber for thermoelectric energy harvesting in Space.

Physical chemistry chemical physics : PCCP·2026
Same author

Charge and Spin Transport in Doped Rubrene Thin-Film Crystals.

ACS nano·2026
Same journal

Electrospun Liquid Crystal Elastomers as Stress-Free Thermo- and Photoresponsive Actuators.

ACS applied materials & interfaces·2026
Same journal

Tunable Electrical Transport and Magnetic Anisotropy in Textured SrRuO<sub>3</sub> Films Mediated by Gap Control of Monolayer Ca<sub>2</sub>Nb<sub>3</sub>O<sub>10</sub> Nanosheet Templates.

ACS applied materials & interfaces·2026
Same journal

Label-Free Capacitive Immunosensing of Lactate Dehydrogenase and Interleukin-6 Using a Protein-Passivated Graphene Interface.

ACS applied materials & interfaces·2026
Same journal

Improved Carrier Transport and Enhanced Detection Sensitivity Through Zr<sup>4+</sup> Doping in LiYMo<sub>2</sub>O<sub>8</sub> Single Crystals for X-ray Detectors.

ACS applied materials & interfaces·2026
Same journal

Near-Infrared Light-Driven Microgrooved UCNPs/Azobenzene-LCE Actuators and Substrates for Cardiomyoblast Alignment.

ACS applied materials & interfaces·2026
Same journal

Recent Advances in Superlattice-Based Thermoelectrics.

ACS applied materials & interfaces·2026
See all related articles

Related Experiment Video

Updated: Nov 17, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.8K

Modulation Doping for Threshold Voltage Control in Organic Field-Effect Transistors.

Ilia Lashkov1, Kevin Krechan1, Katrin Ortstein1

  • 1Dresden Integrated Center for Applied Physics and Photonic Materials, Technische Universität Dresden, Nöthnitzer Strasse 61, Dresden 01187, Germany.

ACS Applied Materials & Interfaces
|February 11, 2021
PubMed
Summary
This summary is machine-generated.

Researchers developed organic semiconductor modulation-doped field-effect transistors (MODFETs) for flexible electronics. This breakthrough precisely controls threshold voltage, overcoming key hurdles for digital organic circuits.

Keywords:
charge transportin situ conductivitymodulation dopingorganic field-effect transistorsorganic heterostructurethreshold voltage control

More Related Videos

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

12.0K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.9K

Related Experiment Videos

Last Updated: Nov 17, 2025

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.8K
Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor
11:17

Sensing of Barrier Tissue Disruption with an Organic Electrochemical Transistor

Published on: February 10, 2014

12.0K
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
14:16

Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy

Published on: October 23, 2018

7.9K

Area of Science:

  • Materials Science
  • Organic Electronics
  • Semiconductor Physics

Background:

  • Organic field-effect transistors (OFETs) offer flexible electronics but face challenges in digital circuit commercialization.
  • Precise threshold voltage (Vth) control is crucial for effective digital circuitry.
  • Existing methods like doping and self-assembled monolayers have limitations in reproducibility and performance.

Purpose of the Study:

  • To introduce and demonstrate the concept of organic semiconductor modulation-doped field-effect transistors (MODFETs).
  • To address the limitations of current OFETs by enabling precise threshold voltage adjustment.
  • To reduce semiconductor-dopant interaction for improved device performance.

Main Methods:

  • Fabrication of organic-organic heterostructures using highly doped wide-energy-gap and undoped narrow-energy-gap materials.
  • Utilizing impedance spectroscopy and ultraviolet photoelectron spectroscopy to analyze the heterostructure's energy landscape.
  • Investigating the impact of doping concentration and buffer layer thickness on charge transfer and transport properties.

Main Results:

  • Demonstrated a novel organic MODFET design based on organic-organic heterostructures.
  • Precisely adjusted the threshold voltage by controlling doping concentration and buffer layer characteristics.
  • Showcased reduced semiconductor-dopant interaction, mitigating issues associated with direct doping.

Conclusions:

  • Organic MODFETs offer a viable solution for precise threshold voltage control in organic digital circuits.
  • This technology advances the commercial viability of flexible electronic devices.
  • The modulation doping concept effectively overcomes previous limitations in OFET performance and reliability.