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Nondestructive, high-resolution, chemically specific 3D nanostructure characterization using phase-sensitive EUV

Michael Tanksalvala1, Christina L Porter2, Yuka Esashi1

  • 1STROBE Science and Technology Center, JILA, University of Colorado, Boulder, CO 80309, USA. michael.tanksalvala@colorado.edu yuka.esashi@colorado.edu.

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Summary
This summary is machine-generated.

We developed a new extreme ultraviolet imaging reflectometer for analyzing nanoscale devices. This technique nondestructively probes surface topography, composition, and interfaces with high fidelity.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Quantum Devices

Background:

  • Next-generation nano- and quantum devices feature complex 3D structures.
  • Device performance at the nanoscale is critically dependent on interface quality and precise chemical or dopant composition.

Purpose of the Study:

  • To introduce the first phase-sensitive extreme ultraviolet imaging reflectometer.
  • To enable non-destructive probing of nanoscale device characteristics.

Main Methods:

  • Combining coherent high-harmonic sources with extreme ultraviolet reflectometry and ptychography imaging algorithms.
  • Implementing variable-angle ptychographic imaging and total variation regularization for high-fidelity reconstruction.
  • Utilizing a high-brightness, stable high-harmonic source.

Main Results:

  • The developed microscope can nondestructively probe surface topography, layer thicknesses, and interface quality.
  • The technique allows for the characterization of dopant concentrations and profiles.
  • Measurements were validated through multiscale, multimodal imaging.

Conclusions:

  • This phase-sensitive extreme ultraviolet imaging reflectometer offers unique advantages over electron and scanning probe microscopies.
  • The technique provides high-fidelity imaging for complex nanoscale device analysis.