Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

600
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
600

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Enhancing Hole Mobility in Monolayer WSe<sub>2</sub> p-Type Field-Effect Transistors via Process-Induced Compression.

ACS nano·2026
Same author

Quantitative Atomic Resolution Electron Ptychography of Thermal Vibrations Under <i>In Situ</i> Heating.

ACS nano·2026
Same author

Atomic and Electronic Structure of Strongly Charged Domain Walls in van der Waals α-In<sub>2</sub>Se<sub>3</sub>.

Nano letters·2026
Same author

Field-Effect Transistors from Artificial Charged Domain Walls in Stacked Van der Waals Ferroelectric α-In<sub>2</sub>Se<sub>3</sub>.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Overcoming the Lattice Mismatch Barrier for Atomic Reconstruction in MoSe<sub>2</sub>/MoS<sub>2</sub> Heterobilayers.

ACS nano·2025
Same author

The Next 25 Years of Nanoscience and Nanotechnology: A <i>Nano Letters</i> Roadmap.

Nano letters·2025

Related Experiment Video

Updated: Nov 17, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

11.2K

Tip-Based Cleaning and Smoothing Improves Performance in Monolayer MoS2 Devices.

Sihan Chen1, Jangyup Son1, Siyuan Huang1

  • 1Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.

ACS Omega
|February 15, 2021
PubMed
Summary

Atomic force microscopy (AFM) tip-based cleaning enhances the performance of two-dimensional (2D) material electronic devices. This technique improves the electrical properties of molybdenum disulfide (MoS2) transistors by reducing interface contamination and disorder.

More Related Videos

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.5K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.0K

Related Experiment Videos

Last Updated: Nov 17, 2025

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
11:24

Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

11.2K
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
08:50

Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication

Published on: November 28, 2017

9.5K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.0K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Condensed Matter Physics

Background:

  • Two-dimensional (2D) materials and heterostructures are key for next-generation nanoelectronics.
  • Material interface quality critically impacts device performance in atomically thin electronics.
  • Contamination and roughness at interfaces hinder the potential of 2D material devices.

Purpose of the Study:

  • To investigate the impact of Atomic Force Microscopy (AFM) tip-based cleaning on the electrical performance of hBN-encapsulated monolayer MoS2 transistors.
  • To demonstrate the effectiveness of AFM tip-based cleaning in improving device characteristics.
  • To understand how interface cleaning affects charge carrier mobility.

Main Methods:

  • Fabrication of hBN-encapsulated monolayer MoS2 transistors.
  • Application of AFM tip-based cleaning to remove interface contaminants and flatten heterostructures.
  • Characterization using photoluminescence (PL) spectroscopy and electronic measurements (field-effect measurements).

Main Results:

  • Photoluminescence (PL) linewidth of MoS2 decreased from 84 meV to 71 meV after cleaning, indicating improved material quality.
  • Extrinsic mobility of MoS2 field-effect transistors (FETs) increased from 21 cm²/Vs to 38 cm²/Vs post-cleaning.
  • A MoS2 FET fabricated from a cleaned heterostructure achieved a mobility of 73 cm²/Vs.

Conclusions:

  • AFM tip-based cleaning effectively reduces interface disorder in hBN-encapsulated MoS2 heterostructures.
  • The cleaning process significantly enhances the electrical performance, particularly carrier mobility, of 2D material-based transistors.
  • This technique offers a viable method for improving the performance of mechanically assembled van der Waals heterostructures for nanoelectronic applications.