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Inverting logic-in-memory cells comprising silicon nanowire feedback field-effect transistors.

Young-Soo Park1, Doohyeok Lim1, Jaemin Son1

  • 1Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea.

Nanotechnology
|February 22, 2021
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Summary

Researchers developed novel inverting logic-in-memory (LIM) cells using silicon nanowire transistors. These cells offer high speed and improved memory retention, outperforming traditional dynamic random access memory (DRAM).

Keywords:
feedback field-effect transistorslogic-in-memorymemory hierarchymixed-mode simulationsilicon nanowireswitchable memory device

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Area of Science:

  • * Solid-state device physics
  • * Non-volatile memory technologies
  • * Integrated circuit design

Background:

  • * Logic-in-memory (LIM) architectures aim to reduce data movement bottlenecks in computing.
  • * Silicon nanowire field-effect transistors (FETs) offer unique scaling and switching properties.
  • * Steep switching and holding characteristics are crucial for efficient memory cell operation.

Purpose of the Study:

  • * To propose and investigate novel inverting logic-in-memory (LIM) cells.
  • * To leverage silicon nanowire feedback FETs for enhanced memory cell performance.
  • * To verify the operational viability and characteristics of these LIM cells.

Main Methods:

  • * Design and simulation of inverting LIM cells using mixed-mode technology computer-aided design (TCAD).
  • * Analysis of timing diagrams under dynamic and static operating conditions.
  • * Evaluation of disturbance effects in a simulated LIM array.

Main Results:

  • * Achieved operating speeds on the order of nanoseconds.
  • * Demonstrated ultra-high voltage gain and significantly longer retention times compared to conventional DRAM.
  • * Confirmed appropriate functioning of the random access memory array through disturbance characteristic analysis.

Conclusions:

  • * The proposed inverting LIM cells based on silicon nanowire feedback FETs show promising performance.
  • * These cells offer advantages in speed, gain, and retention time over existing memory technologies.
  • * The findings support the potential of these LIM cells for advanced computing applications.