1T-TCAM with binary storage enabling ternary matching via bias-controlled wildcards using a feedback field-effect...

Area of Science:

• Semiconductor device physics
• Memory technology
• Computer architecture

Background:

• Ternary content-addressable memory (TCAM) is crucial for high-speed search applications.
• Existing TCAM cells often face challenges in power consumption and integration density.
• A reconfigurable cell enabling ternary matching with binary storage is desirable.

Purpose of the Study:

• To propose and analyze a novel reconfigurable one-transistor ternary content-addressable memory (1T-TCAM) cell.
• To demonstrate ternary matching capabilities using binary data storage.
• To evaluate the performance of the proposed cell using TCAD simulations.

Main Methods:

• Device fabrication using a triple-gated feedback field-effect transistor (FBFET) with a nitride charge-trapping layer.
• Analysis of energy band diagrams and electrical characteristics.
• TCAD simulation of cell-level functionality, sensing margin, search time, and 8-bit array performance.

Main Results:

• The proposed 1T-TCAM cell supports 'Search 0', 'Search 1', and 'Don't Care' operations via gate voltage control.
• Achieved a search time below 2 ns with a high on-current of approximately 10 µA.
• Demonstrated a sensing margin exceeding 10^10, indicating robust performance.

Conclusions:

• The novel 1T-TCAM cell offers efficient ternary matching with binary storage.
• It exhibits high CMOS process compatibility, superior integration density, and high-speed search capabilities.
• The design presents a promising solution for next-generation memory systems.