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The presence of a dielectric medium in a capacitor not only changes the voltage and capacitance but also affects the electric field. In general, dielectrics can be of two types: polar and nonpolar. In a polar dielectric, the positive and negative charges in the molecules are separated by a distance and hence have a permanent dipole moment. In contrast, no such charge separation exists in a nonpolar dielectric, however the nonpolar molecules get polarized in the presence of an external electric...
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Consider a polar dielectric placed in an external field. In such a dielectric, opposite charges on adjacent dipoles neutralize each other, such that the net charge within the dielectric is zero. When a polar dielectric is inserted in between the capacitor plates, an electric field is generated due to the presence of net charges near the edge of the dielectric and the metal plates interface. Since the external electrical field merely aligns the dipoles, the dielectric as a whole is neutral. An...
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A neutral atom consists of a positively charged nucleus surrounded by a negatively charged electron cloud. When placed in an external electric field, the external electric force pulls the electrons and nucleus apart, opposite to the intrinsic attraction between the nucleus and the electrons. The opposing forces balance each other with a slight shift between the center of masses of the nucleus and the electron cloud, resulting in a polarized atom. On the other hand, a few molecules, like water,...
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Charge Trapping in Amorphous Dielectrics for Secure Charge Storage.

Seung Jae Baik1, Hyunjung Shin2

  • 1School of Electronic and Electrical Engineering, Hankyong National University, 327 Jungang-ro, Anseong-si, Gyeonggi-do 17579, Korea.

ACS Applied Materials & Interfaces
|February 23, 2021
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Summary

Secure charge trapping in future high-density NAND flash memory requires amorphous dielectric materials. Composition-graded dielectric thin films enable low-temperature fabrication for advanced data storage solutions.

Keywords:
NAND flashamorphouscharge trap flashcomposition gradingdielectric constant

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid State Physics

Background:

  • Charge trapping in dielectric materials is fundamental to modern information society.
  • NAND flash memory, a key data storage device, relies on charge trapping in silicon nitride.
  • Increasing data demands necessitate higher information density in storage devices.

Purpose of the Study:

  • To investigate the role of amorphous phases in high-dielectric constant charge-trapping materials.
  • To explore low-temperature fabrication methods for advanced NAND flash memory.
  • To identify promising dielectric solutions for future high-density storage.

Main Methods:

  • Fabrication of composition-graded dielectric thin films.
  • Characterization of charge trapping properties in amorphous dielectric phases.
  • Evaluation of dielectric constant and process temperature requirements.

Main Results:

  • The amorphous phase is essential for secure charge trapping in high-dielectric constant materials.
  • Lower process temperatures are achievable with amorphous dielectric phases.
  • Composition-graded dielectric thin films facilitate low-temperature NAND flash fabrication.

Conclusions:

  • Amorphous dielectric materials are critical for next-generation charge-trapping applications.
  • Composition-graded films offer a viable pathway for energy-efficient, low-temperature manufacturing of NAND flash.
  • This research paves the way for denser and more efficient data storage technologies.