Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Selective Growth of Bulk-Like Perovskite in Plasmonic Nanoholes for Enhanced Two-Photon-Excited Emission.

Advanced materials (Deerfield Beach, Fla.)·2026
Same author

Reducing Plasma-Induced Damage in 2D Transition Metal Dichalcogenide Heterostructures through Optimized Plasma-Enhanced Atomic Layer Deposition.

ACS applied materials & interfaces·2026
Same author

Reconfigurable second-harmonic generation via plasmonic nanoslits counteracting strain-induced suppression in monolayer MoS<sub>2</sub>.

Science advances·2026
Same author

Epitaxial n-ZnO/MoS<sub>2</sub>/p-GaN Heterostructure Light-Emitting Diodes.

Nano letters·2026
Same author

Electrical Control of Single Photon Emitters in WSe<sub>2</sub> on a Si Nanopyramid Array with a Negligible Stark Effect.

Nano letters·2026
Same author

Stacked nanogap plasmons for multispectral photoluminescence.

Optics express·2025

Related Experiment Video

Updated: Nov 16, 2025

Fabricating Nanogaps by Nanoskiving
07:36

Fabricating Nanogaps by Nanoskiving

Published on: May 13, 2013

11.4K

Ultraflat Sub-10 Nanometer Gap Electrodes for Two-Dimensional Optoelectronic Devices.

Seon Namgung1,2, Steven J Koester1, Sang-Hyun Oh1

  • 1Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, Minnesota 55455, United States.

ACS Nano
|February 24, 2021
PubMed
Summary

Researchers developed an ultraflat nanogap platform using atomic layer deposition (ALD) for advanced two-dimensional (2D) material devices. This platform enables the fabrication of high-performance 2D optical and electronic devices with nanoscale channels.

Keywords:
atomic layer depositionatomic layer lithographyfield-effect transistorphotodetectortemplate strippingtwo-dimensional materials

More Related Videos

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.0K
Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

10.4K

Related Experiment Videos

Last Updated: Nov 16, 2025

Fabricating Nanogaps by Nanoskiving
07:36

Fabricating Nanogaps by Nanoskiving

Published on: May 13, 2013

11.4K
A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
07:12

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

Published on: August 28, 2018

10.0K
Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh
11:09

Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh

Published on: June 23, 2017

10.4K

Area of Science:

  • Materials Science
  • Nanotechnology
  • Condensed Matter Physics

Background:

  • Two-dimensional (2D) materials offer unique electronic and optical properties due to their atomic thinness.
  • Fabricating ultrashort-channel devices with 2D materials requires precise control over nanoscale dimensions and surface flatness.

Purpose of the Study:

  • To demonstrate an ultraflat nanogap platform for fabricating 2D material-based optical and electronic devices.
  • To showcase the platform's capability in creating short-channel field-effect transistors and highly sensitive photodetectors.

Main Methods:

  • Utilized atomic layer deposition (ALD) to create an ultraflat nanogap platform with 10 nm gap width.
  • Employed template-stripped metal surfaces with root-mean-square roughness below monolayer graphene thickness.
  • Fabricated devices by directly placing 2D material flakes (black phosphorus, MoS2) onto the nanogap platform.

Main Results:

  • Demonstrated successful fabrication of short-channel field-effect transistors based on black phosphorus and MoS2, exhibiting typical transistor characteristics.
  • Showcased photodetectors with nanoscale photosensitive channels achieving higher photosensitivity than microscale counterparts.
  • Confirmed the ultraflat nature of the electrodes (RMS roughness of 0.315 nm).

Conclusions:

  • The developed ultraflat nanogap platform is a versatile tool for fabricating advanced 2D material devices.
  • This wafer-scale atomic layer lithography method has broad applicability in 2D optical and electronic device research and development.
  • The platform facilitates the creation of next-generation ultrashort-channel devices with enhanced performance.