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Updated: Jun 3, 2026
08:50
Preparation of Large-area Vertical 2D Crystal Hetero-structures Through the Sulfurization of Transition Metal Films for Device Fabrication
Published on: November 28, 2017
Reducing Plasma-Induced Damage in 2D Transition Metal Dichalcogenide Heterostructures through Optimized
Rebecca A Dawley1, Anil Adhikari2, Khondker Shihabul Hoque2
1Department of Chemistry, University of Michigan, Ann Arbor 48109, Michigan, United States.
ACS Applied Materials & Interfaces
|June 2, 2026
Summary
Plasma damage to 2D transition-metal dichalcogenides (TMDs) during device fabrication was minimized. Optimized plasma-enhanced atomic layer deposition (PEALD) preserves material quality for advanced electronics.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Two-dimensional transition-metal dichalcogenides (2D TMDs) are promising for next-generation transistors.
- Plasma processing in device integration can cause significant damage to 2D TMDs.
Purpose of the Study:
- To systematically identify and minimize plasma-induced damage during plasma-enhanced atomic layer deposition (PEALD) of TMD films.
- To optimize PEALD processes for integrating 2D TMDs in electronic devices.
Main Methods:
- Utilized Raman, photoluminescence, and X-ray photoelectron spectroscopy to assess plasma damage.
- Investigated Ar/H2S plasmas' effects on monolayer WSe2.
- Developed optimized PEALD parameters by adjusting plasma composition, power, and pressure.
Main Results:
- Reduced plasma-induced damage to WSe2 by removing Ar, lowering plasma power, and increasing pressure.
- Successfully applied optimized parameters to deposit NbxW1-xS2 films.
- Demonstrated enhanced preservation of WSe2 in heterostructures using optimized PEALD.
Conclusions:
- Developed strategies to mitigate plasma damage in 2D materials.
- Paved the way for robust plasma processing of 2D materials for high-performance electronic devices.
