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Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis.

Bhaswar Chakrabarti¹, Henry Chan^2,3, Khan Alam¹

¹Institute for Molecular Engineering, Eckhardt Research Center, University of Chicago, 5640 S. Ellis Avenue, Chicago, Illinois 60637, United States.

|March 1, 2021

Summary

Ultraporous dielectrics enable high-performance resistive memory devices. This approach significantly reduces switching power and improves on/off ratios for neuromorphic computing and nonvolatile memory applications.

Keywords:

conductive bridge memory nanoporous alumina resistive memory sequential infiltration synthesis ultralow power switching

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Metal-insulator-metal structures are crucial for neuromorphic computing and nonvolatile memory.
Existing devices face challenges like high power consumption, variability, and trade-offs in performance metrics.

Purpose of the Study:

To address limitations in resistive memory devices by utilizing ultraporous dielectrics.
To demonstrate a novel fabrication method for high-performance resistive memory.

Main Methods:

Fabrication of ultraporous oxide dielectrics (∼15 nm thick, ∼5 nm pores, up to 73% porosity) using sequential infiltration synthesis.
Integration of these dielectrics into Ag/Al2O3 resistive switching devices.

Main Results:

Achieved ultrahigh on/off ratio (>10^9) at ultralow switching voltages (∼±600 mV), a 10x improvement over bulk materials.
Demonstrated fast switching, high pulsed endurance (1 million cycles), and excellent retention at elevated temperatures (125 °C for 10^4 s).

Conclusions:

Ultraporous dielectrics offer a promising pathway for high-performance resistive memory.
The scalable and cost-effective synthesis method is compatible with existing semiconductor fabrication processes.