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Enhanced Photodetection in Glancing Angle Deposited One-Dimensional In₂O₃ Nanorod Array
Amitabha Nath1, Rahul Raman1, Laishram Robindro Singh2
1Department of Electronics and Communication Engineering, National Institute of Technology Agartala, Jirania, West Tripura 799046, India.
Journal of Nanoscience and Nanotechnology
|March 3, 2021
Summary
This study developed 1D Indium Oxide (In₂O₃) nanorod arrays using glancing angle deposition (GLAD) for enhanced photodetector performance. The nanorod structure significantly improved current conduction and photosensitivity compared to thin films.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Indium Oxide (In₂O₃) is a promising semiconductor material for optoelectronic applications.
- Developing nanostructured In₂O₃ can enhance its material properties and device performance.
- Glancing Angle Deposition (GLAD) offers precise control over nanostructure morphology.
Purpose of the Study:
- To fabricate and characterize 1D In₂O₃ nanorod arrays on n-Si substrates using GLAD.
- To investigate the structural, morphological, and optical properties of the nanostructures.
- To evaluate the performance of photodetectors based on In₂O₃ nanorods compared to thin films.
Main Methods:
- Glancing Angle Deposition (GLAD) electron beam evaporation for 1D In₂O₃ nanorod array fabrication.
- Field Emission Scanning Electron Microscopy (FESEM), Energy Dispersive Spectroscopy (EDS), High-Resolution Transmission Electron Microscopy (HRTEM) for morphology and composition analysis.
- High-Resolution X-ray Diffraction (HRXRD) and Atomic Force Microscopy (AFM) for structural and surface analysis.
- Photoluminescence (PL) spectroscopy for optical property assessment.
- Current-Voltage (I-V) measurements to evaluate device performance.
Main Results:
- Successfully fabricated ~400 nm tall 1D In₂O₃ nanorod arrays on n-Si substrates.
- Observed a significant reduction in photoluminescence intensity (~4.4 fold) for nanorods.
- In₂O₃ nanorod devices showed enhanced current conduction (~2.2 fold) and photosensitivity (~1.1 fold).
- Achieved high photoresponsivity (~28 μA/W), specific detectivity (~9.9×10⁷ Jones), and low Noise Equivalent Power (NEP) (~4.5×10⁻¹² W/√Hz).
- Demonstrated ~2.5 fold higher detectivity and ~2.4 fold lower NEP for nanorod detectors compared to thin films.
Conclusions:
- GLAD technique is effective for creating 1D In₂O₃ nanorod arrays with improved optoelectronic properties.
- The nanorod morphology significantly enhances photodetector performance, including current conduction, photosensitivity, detectivity, and reduces noise.
- These findings highlight the potential of In₂O₃ nanorod arrays for advanced photodetector applications.
